Suligoj, Tomislav : rechercher sur Z-Library

Poljak, Mirko, Suligoj, Tomislav

Année:

2010

Langue:

english

Fichier:

PDF, 1.61 MB

english, 2010

The Potential of Phosphorene Nanoribbons as Channel Material for Ultrascaled Transistors

Journal:

Mirko Poljak, Vladimir Jovanović, Tomislav Suligoj

Année:

2018

Langue:

english

Fichier:

PDF, 1.22 MB

english, 2018

Improving bulk FinFET DC performance in comparison to SOI FinFET

Journal:

Microelectronic Engineering

Année:

2009

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2009

Ultra-high aspect-ratio FinFET technology

Vladimir Jovanović, Tomislav Suligoj, Mirko Poljak, Yann Civale, Lis K. Nanver

Journal:

Mirko Poljak, Vladimir Jovanović, Tomislav Suligoj

Année:

2010

Langue:

english

Fichier:

PDF, 974 KB

english, 2010

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Journal:

Svilicic, Boris, Jovanovic, Vladimir, Suligoj, Tomislav

Année:

2011

Langue:

english

Fichier:

PDF, 1.49 MB

english, 2011

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Vertical silicon-on-nothing FET: Threshold voltage calculation using compact capacitance model

Année:

2007

Langue:

english

Fichier:

PDF, 251 KB

english, 2007

[IEEE MELECON 2008 - 2008 IEEE Mediterranean Electrotechnical Conference - Ajaccio, France (2008.05.5-2008.05.7)] MELECON 2008 - The 14th IEEE Mediterranean Electrotechnical Conference - SOI vs. bulk FinFET: Body doping and corner effects influence on device characteristics

Poljak, Mirko, Jovanovic, Vladimir, Suligoj, Tomislav

Année:

2008

Langue:

english

Fichier:

PDF, 815 KB

english, 2008

[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Bulk-Si FinFET technology for ultra-high aspect-ratio devices

Jovanovic, Vladimir, Nanver, Lis K., Suligoj, Tomislav, Poljak, Mirko

Année:

2009

Langue:

english

Fichier:

PDF, 1.43 MB

english, 2009

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Technological constrains of bulk FinFET structure in comparison with SOI FinFET

Poljak, Mirko, Jovanovic, Vladimir, Suligoj, Tomislav

Année:

2007

Langue:

english

Fichier:

PDF, 690 KB

english, 2007

Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects

Poljak, Mirko, Suligoj, Tomislav

Journal:

Nano Research

Année:

2016

Langue:

english

Fichier:

PDF, 2.57 MB

english, 2016

Vertical SiGe-based silicon-on-nothing (SON) technology for sub-30 nm MOS devices

Phillip E. Thompson, Glenn Jernigan, Joerg Schulze, Ignaz Eisele, Tomislav Suligoj

Journal:

Materials Science in Semiconductor Processing

Année:

2005

Langue:

english

Fichier:

PDF, 365 KB

english, 2005

Suppression of corner effects in wide-channel triple-gate bulk FinFETs

Mirko Poljak, Vladimir Jovanović, Tomislav Suligoj

Journal:

Microelectronic Engineering

Année:

2010

Langue:

english

Fichier:

PDF, 1.62 MB

english, 2010

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

Tomislav Suligoj, Haitao Liu, Johnny K.O. Sin, Kenneth Tsui, Rongming Chu, Kevin J. Chen, Petar Biljanovic, Kang L. Wang

Journal:

Suligoj, Tomislav, KoricÌicÌ, Marko, Mochizuki, Hidenori, Morita, So-ichi, Shinomura, Katsumi, Imai, Hisaya

Année:

2004

Langue:

english

Fichier:

PDF, 340 KB

english, 2004

Horizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs

Journal:

IEEE Electron Device Letters

Année:

2010

Langue:

english

Fichier:

PDF, 414 KB

english, 2010

Influence of Edge Defects, Vacancies, and Potential Fluctuations on Transport Properties of Extremely Scaled Graphene Nanoribbons

Poljak, Mirko, Song, Emil B., Wang, Minsheng, Suligoj, Tomislav, Wang, Kang L.

Journal:

Jovanovic, Vladimir, Poljak, Mirko, Suligoj, Tomislav, Civale, Yann, Nanver, Lis K.

Année:

2012

Langue:

english

Fichier:

PDF, 1.11 MB

english, 2012

[IEEE 2009 67th Annual Device Research Conference (DRC) - University Park, PA, USA (2009.06.22-2009.06.24)] 2009 Device Research Conference - 1.9 nm wide ultra-high aspect-ratio bulk-Si FinFETs

Année:

2009

Langue:

english

Fichier:

PDF, 935 KB

english, 2009

[IEEE 2014 37th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Opatija, Croatia (2014.5.26-2014.5.30)] 2014 37th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs

Ivanie, Vedran, Poljak, Mirko, Suligoj, Tomislav

Année:

2014

Langue:

english

Fichier:

PDF, 145 KB

english, 2014

[IEEE IEEE EUROCON 2009 (EUROCON) - St. Petersburg, Russia (2009.05.18-2009.05.23)] IEEE EUROCON 2009 - Suppression of corner effects in triple-gate bulk FinFETs

Poljak, Mirko, Jovanovic, Vladimir, Suligoj, Tomislav

Année:

2009

Langue:

english

Fichier:

PDF, 727 KB

english, 2009

Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration

Koricic, Marko, Suligoj, Tomislav, Mochizuki, Hidenori, Morita, So-ichi, Shinomura, Katsumi, Imai, Hisaya

Journal:

Poljak, Mirko, Suligoj, Tomislav, Jovanovic, Vladimir

Année:

2012

Langue:

english

Fichier:

PDF, 918 KB

english, 2012

[IEEE ESSDERC 2010 - 40th European Solid State Device Research Conference - Sevilla, Spain (2010.09.14-2010.09.16)] 2010 Proceedings of the European Solid State Device Research Conference - Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Année:

2010

Langue:

english

Fichier:

PDF, 667 KB

english, 2010

Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost

IEEE Electron Device Letters

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 1.40 MB

english, 2015

[ECS 213th ECS Meeting - Phoenix, AZ (May 18 - May 23, 2008)] ECS Transactions - Crystallographic Silicon-Etching for Ultra-High Aspect-Ratio FinFET

Jovanovic, Vladimir, Suligoj, Tomislav, Nanver, Lis

Année:

2008

Langue:

english

Fichier:

PDF, 1.44 MB

english, 2008

[IEEE 2015 38th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Opatija, Croatia (2015.5.25-2015.5.29)] 2015 38th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices

Année:

2015

Langue:

english

Fichier:

PDF, 828 KB

english, 2015

Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials

Journal:

Poljak, Mirko, Krivec, Sabina, Suligoj, Tomislav

Année:

2015

Langue:

english

Fichier:

PDF, 3.43 MB

english, 2015

[IEEE 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Bologna, Italy (2015.1.26-2015.1.28)] EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels

Année:

2015

Langue:

english

Fichier:

PDF, 267 KB

english, 2015

Quantum Transport Analysis of Conductance Variability in Graphene Nanoribbons With Edge Defects

Poljak, Mirko, Suligoj, Tomislav

Journal:

Zilak, Josip, Koricic, Marko, Suligoj, Tomislav

Année:

2015

Langue:

english

Fichier:

PDF, 2.49 MB

english, 2015

Reliability Degradation Mechanisms of Horizontal Current Bipolar Transistor

Journal:

Zilak, Josip, Koricic, Marko, Suligoj, Tomislav, Mochizuki, Hidenori, Morita, So-ichi

Année:

2016

Langue:

english

Fichier:

PDF, 4.19 MB

english, 2016

[IEEE 2016 11th European Microwave Integrated Circuits Conference (EuMIC) - London, United Kingdom (2016.10.3-2016.10.4)] 2016 11th European Microwave Integrated Circuits Conference (EuMIC) - A low-cost 180 nm BiCMOS technology with Horizontal Current Bipolar Transistor (HCBT) for wireless communication ICs

Année:

2016

Langue:

english

Fichier:

PDF, 701 KB

english, 2016

[IEEE 2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Opatija, Croatia (2016.5.30-2016.6.3)] 2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Analysis of electrical and optical characteristics of InP/InGaAs avalanche photodiodes in linear regime by a new simulation environment

Knezevic, Tihomir, Suligoj, Tomislav

Année:

2016

Langue:

english

Fichier:

PDF, 394 KB

english, 2016

A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration

Journal:

Année:

2017

Langue:

english

Fichier:

PDF, 1.43 MB

english, 2017

[IEEE 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Athens, Greece (2017.4.3-2017.4.5)] 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors

Année:

2017

Langue:

english

Fichier:

PDF, 354 KB

english, 2017

[IEEE 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Opatija, Croatia (2017.5.22-2017.5.26)] 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Band-structure of ultra-thin InGaAs channels: Impact of biaxial strain and thickness scaling

Année:

2017

Langue:

english

Fichier:

PDF, 1.39 MB

english, 2017

[IEEE 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Opatija, Croatia (2017.5.22-2017.5.26)] 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Impact of the local p-well substrate parameters on the electrical performance of the Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor

Knezevic, Tihomir, Nanver, Lis K., Suligoj, Tomislav

Année:

2017

Langue:

english

Fichier:

PDF, 1.39 MB

english, 2017

[IEEE 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Opatija, Croatia (2017.5.22-2017.5.26)] 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions

Année:

2017

Langue:

english

Fichier:

PDF, 1.36 MB

english, 2017

Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays

Osrečki, Željko, Knežević, Tihomir, Nanver, Lis K., Suligoj, Tomislav

Journal:

Optical and Quantum Electronics

Année:

2018

Langue:

english

Fichier:

PDF, 924 KB

english, 2018

[IEEE 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - Miami, FL (2017.10.19-2017.10.21)] 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - Improving the horizontal current bipolar transistor breakdown voltage by floating field plates

Osrecki, Zeljko, Knezevic, Tihomir, Nanver, Lis K., Suligoj, Tomislav

Année:

2017

Langue:

english

Fichier:

PDF, 844 KB

english, 2017

[IEEE 2017 17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Copenhagen (2017.7.24-2017.7.28)] 2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays

Année:

2017

Fichier:

PDF, 201 KB

2017

The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs

Journal:

Knežević, Tihomir, Nanver, Lis, Suligoj, Tomislav

Année:

2018

Langue:

english

Fichier:

PDF, 1.17 MB

english, 2018

Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches

Journal:

Photonics

Année:

2016

Langue:

english

Fichier:

PDF, 7.72 MB

english, 2016

[IEEE 2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS) - Platja d'Aro (2018.7.2-2018.7.4)] 2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS) - Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μM High-Voltage CMOS Technology

Segmanovic, Filip, Roger, Frederic, Meinhard, Gerald, Jonak-Auer, Ingrid, Suligoj, Tomislav

Année:

2018

Fichier:

PDF, 379 KB

2018

Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes

Knezevic, Tihomir, Liu, Xingyu, Hardeveld, Erwin, Suligoj, Tomislav, Nanver, Lis K.

Journal:

IEEE Electron Device Letters

Année:

2019

Langue:

english

Fichier:

PDF, 859 KB

english, 2019

[IEEE ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Cracow, Poland (2019.9.23-2019.9.26)] ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C

Knezevic, Tihomir, Suligoj, Tomislav, Liu, Xingyu, Nanver, Lis K., Elsayed, Ahmed, Dick, Jan F., Schulze, Joerg

Année:

2019

Fichier:

PDF, 1.70 MB

2019

Horizontal Current Bipolar Transistor (HCBT) Technology for High Linearity RF Mixers

Zilak, Josip, Koricic, Marko, Osrecki, Zeljko, Suligoj, Tomislav

Journal: